Vishay IRFI Type P-Channel Power MOSFET, 4.1 A, 250 V Enhancement, 3-Pin TO-220FP IRFI9634GPBF
- RS-artikelnummer:
- 708-4780
- Tillv. art.nr:
- IRFI9634GPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
126,00 kr
(exkl. moms)
157,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 35 enhet(er) från den 26 januari 2026
- Dessutom levereras 1 000 enhet(er) från den 02 februari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 25,20 kr | 126,00 kr |
| 50 - 120 | 21,414 kr | 107,07 kr |
| 125 - 245 | 20,138 kr | 100,69 kr |
| 250 - 495 | 18,906 kr | 94,53 kr |
| 500 + | 17,628 kr | 88,14 kr |
*vägledande pris
- RS-artikelnummer:
- 708-4780
- Tillv. art.nr:
- IRFI9634GPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220FP | |
| Series | IRFI | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | -250V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.8mm | |
| Width | 4.8 mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220FP | ||
Series IRFI | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf -250V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.8mm | ||
Width 4.8 mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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