Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF

RS-artikelnummer:: 688-7140
Tillv. art.nr:: IRFU3711ZPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF

Denna bild representerar endast produktgruppen

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

21,73 kr

(exkl. moms)

27,16 kr

(inkl. moms)

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per förpackning*
5 - 20	4,346 kr	21,73 kr
25 - 45	3,414 kr	17,07 kr
50 - 95	3,324 kr	16,62 kr
100 - 245	3,238 kr	16,19 kr
250 +	3,116 kr	15,58 kr

*vägledande pris

RS-artikelnummer:: 688-7140
Tillv. art.nr:: IRFU3711ZPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	93 A
	Maximum Drain Source Voltage	20 V
	Package Type	IPAK
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.45V
	Minimum Gate Threshold Voltage	1.55V
	Maximum Power Dissipation	79 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	18 nC @ 4.5 V
	Width	2.3mm
	Length	6.6mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	6.1mm

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 93 A
	Maximum Drain Source Voltage 20 V
	Package Type IPAK
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.45V
	Minimum Gate Threshold Voltage 1.55V
	Maximum Power Dissipation 79 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 18 nC @ 4.5 V
	Width 2.3mm
	Length 6.6mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 6.1mm

MOSFET N-ch HEXFET 20V 93A IPAK

COO (Country of Origin):: MX

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF

N-Channel Power MOSFET 12V to 25V, Infineon

relaterade länkar