Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF

RS-artikelnummer:: 688-7027
Tillv. art.nr:: IRFP4668PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247 IRFP4668PBF

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RS-artikelnummer:: 688-7027
Tillv. art.nr:: IRFP4668PBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	520W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	161nC
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Width	5.31 mm
	Height	20.7mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 520W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 161nC
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Width 5.31 mm
	Height 20.7mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF

This MOSFET is a high-performance N-channel device designed for efficient power management in various applications. Its dimensions are 15.87mm in length, 5.31mm in width, and 20.7mm in height, housed in a TO-247AC package. With robust specifications including a maximum continuous drain current of 130A and a maximum drain-source voltage of 200V, it is Ideal for demanding electrical applications.

Features & Benefits

• Enhanced body diode for improved switching performance

• Low Rds(on) of 10mΩ minimises power loss

• High efficiency in synchronous rectification circuits

• Increased ruggedness under dynamic dV/dt conditions

• Fully characterised avalanche and thermal performance for reliability

Applications

• Used in high-speed power switching

• Suitable for uninterruptible power supply systems

• Ideal for hard-switched and high-frequency circuits

• Applicable in various automation and industrial power systems

What are the thermal ratings for safe operation?

The maximum power dissipation is rated at 520W at 25°C, and the junction temperature should not exceed 175°C to ensure safe operation.

How does the gate threshold voltage impact functionality?

The gate threshold voltage ranges from 3V to 5V, facilitating efficient control during switching operations, which is Crucial for reliable performance in power applications.

Can this MOSFET handle high pulsed current loads?

Yes, it is rated for a pulsed drain current of up to 520A, making it suitable for heavy-duty applications requiring high current handling capabilities.