STMicroelectronics Type N-Channel MOSFET, 5.4 A, 400 V Enhancement, 3-Pin TO-252 STD7NK40ZT4
- RS-artikelnummer:
- 687-5147
- Tillv. art.nr:
- STD7NK40ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
100,80 kr
(exkl. moms)
126,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 255 enhet(er) från den 30 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 20,16 kr | 100,80 kr |
| 10 - 20 | 18,144 kr | 90,72 kr |
| 25 - 95 | 17,114 kr | 85,57 kr |
| 100 - 495 | 12,812 kr | 64,06 kr |
| 500 + | 10,932 kr | 54,66 kr |
*vägledande pris
- RS-artikelnummer:
- 687-5147
- Tillv. art.nr:
- STD7NK40ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252
- STMicroelectronics SuperMESH Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 STD5NK40ZT4
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementRVQ(S
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRFI Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRFI740GPBF
- Vishay Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252