onsemi QFET P-Channel MOSFET, 16.5 A, 100 V, 3-Pin TO-220AB FQP17P10
- RS-artikelnummer:
- 671-5048
- Tillv. art.nr:
- FQP17P10
- Tillverkare / varumärke:
- onsemi
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RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 671-5048
- Tillv. art.nr:
- FQP17P10
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 16.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | QFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 10 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.1mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 16.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Series QFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 10 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.1mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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