onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-220AB FDP33N25

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85,84 kr

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5 +17,168 kr85,84 kr

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RS-artikelnummer:
671-4819
Tillv. art.nr:
FDP33N25
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

250V

Series

UniFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.094Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

235W

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

36.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

9.4mm

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
MY

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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