onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92
- RS-artikelnummer:
- 671-4733P
- Tillv. art.nr:
- 2N7000
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal 200 enheter (levereras i en påse)*
609,40 kr
(exkl. moms)
761,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 7 460 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 200 - 480 | 3,047 kr |
| 500 - 980 | 2,632 kr |
| 1000 - 1980 | 2,319 kr |
| 2000 + | 2,111 kr |
*vägledande pris
- RS-artikelnummer:
- 671-4733P
- Tillv. art.nr:
- 2N7000
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.88V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Standards/Approvals | No | |
| Width | 4.19 mm | |
| Length | 5.2mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-722 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.88V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Standards/Approvals No | ||
Width 4.19 mm | ||
Length 5.2mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-722 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.