onsemi NDS0605 Type P-Channel MOSFET, 180 mA, 60 V Enhancement, 3-Pin SOT-23 NDS0605

RS-artikelnummer:: 671-1071
Tillv. art.nr:: NDS0605
Tillverkare / varumärke:: onsemi

onsemi NDS0605 Type P-Channel MOSFET, 180 mA, 60 V Enhancement, 3-Pin SOT-23 NDS0605

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

17,36 kr

(exkl. moms)

21,70 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Försörjningsbrist

12 590 kvar, redo att levereras

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Enheter	Per enhet	Per förpackning*
10 - 90	1,736 kr	17,36 kr
100 - 240	1,49 kr	14,90 kr
250 - 490	1,288 kr	12,88 kr
500 - 990	1,142 kr	11,42 kr
1000 +	1,03 kr	10,30 kr

*vägledande pris

RS-artikelnummer:: 671-1071
Tillv. art.nr:: NDS0605
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	180mA
	Maximum Drain Source Voltage Vds	60V
	Series	NDS0605
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.8nC
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.5V
	Maximum Operating Temperature	150°C
	Height	0.93mm
	Length	2.92mm
	Standards/Approvals	No
	Width	1.3 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 180mA
	Maximum Drain Source Voltage Vds 60V
	Series NDS0605
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.8nC
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.5V
	Maximum Operating Temperature 150°C
	Height 0.93mm
	Length 2.92mm
	Standards/Approvals No
	Width 1.3 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.