onsemi Type N-Channel MOSFET, 6.3 A, 30 V Enhancement, 3-Pin SOT-223 FDT439N
- RS-artikelnummer:
- 671-0781
- Tillv. art.nr:
- FDT439N
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
43,57 kr
(exkl. moms)
54,46 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 15 enhet(er) från den 19 januari 2026
- Dessutom levereras 1 665 enhet(er) från den 26 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 8,714 kr | 43,57 kr |
| 50 - 95 | 7,504 kr | 37,52 kr |
| 100 - 495 | 6,496 kr | 32,48 kr |
| 500 - 995 | 5,734 kr | 28,67 kr |
| 1000 + | 5,22 kr | 26,10 kr |
*vägledande pris
- RS-artikelnummer:
- 671-0781
- Tillv. art.nr:
- FDT439N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.072Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Width | 3.56 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.072Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Width 3.56 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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