onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 FDN357N

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22,85 kr

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28,55 kr

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  • Dessutom levereras 20 enhet(er) från den 29 december 2025
  • Dessutom levereras 660 enhet(er) från den 05 januari 2026
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Enheter
Per enhet
Per förpackning*
5 - 454,57 kr22,85 kr
50 - 953,942 kr19,71 kr
100 - 4953,404 kr17,02 kr
500 - 9953,002 kr15,01 kr
1000 +2,732 kr13,66 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
671-0441
Tillv. art.nr:
FDN357N
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

FDN357N

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.92mm

Width

1.4 mm

Height

0.94mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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