onsemi PowerTrench Type P-Channel MOSFET, 1.6 A, 20 V Enhancement, 3-Pin SOT-23 FDN338P

RS-artikelnummer:: 671-0438
Tillv. art.nr:: FDN338P
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 1.6 A, 20 V Enhancement, 3-Pin SOT-23 FDN338P

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

42,56 kr

(exkl. moms)

53,20 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Försörjningsbrist

Dessutom levereras 80 enhet(er) från den 29 december 2025
Dessutom levereras 23 440 enhet(er) från den 05 januari 2026

Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.

Enheter	Per enhet	Per förpackning*
10 - 40	4,256 kr	42,56 kr
50 - 90	2,307 kr	23,07 kr
100 - 240	1,792 kr	17,92 kr
250 - 490	1,49 kr	14,90 kr
500 +	1,478 kr	14,78 kr

*vägledande pris

RS-artikelnummer:: 671-0438
Tillv. art.nr:: FDN338P
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.6A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	115mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500mW
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	4.4nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.92mm
	Width	1.4 mm
	Height	0.94mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.6A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 115mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500mW
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 4.4nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.92mm
	Width 1.4 mm
	Height 0.94mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 1.6 A, 20 V Enhancement, 3-Pin SOT-23 FDN338P

GRATIS leverans för online beställningar över 500,00 kr

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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