onsemi PowerTrench Type N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 FDN327N
- RS-artikelnummer:
- 671-0413
- Tillv. art.nr:
- FDN327N
- Tillverkare / varumärke:
- onsemi
Antal (1 förpackning med 5 enheter)*
20,88 kr
(exkl. moms)
26,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 30 enhet(er) från den 29 december 2025
- Dessutom levereras 15 enhet(er) från den 29 december 2025
- Dessutom levereras 17 625 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 + | 4,176 kr | 20,88 kr |
*vägledande pris
- RS-artikelnummer:
- 671-0413
- Tillv. art.nr:
- FDN327N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 0.94mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 0.94mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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