onsemi PowerTrench Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 FDN302P

RS-artikelnummer:: 671-0400
Tillv. art.nr:: FDN302P
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 FDN302P

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

30,69 kr

(exkl. moms)

38,36 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 3 315 enhet(er) från den 19 januari 2026

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Enheter	Per enhet	Per förpackning*
5 - 5	6,138 kr	30,69 kr
10 - 95	4,548 kr	22,74 kr
100 - 995	2,822 kr	14,11 kr
1000 - 2995	2,016 kr	10,08 kr
3000 +	1,568 kr	7,84 kr

*vägledande pris

RS-artikelnummer:: 671-0400
Tillv. art.nr:: FDN302P
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	55mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9nC
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Height	0.94mm
	Length	2.92mm
	Width	1.4 mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 55mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9nC
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Height 0.94mm
	Length 2.92mm
	Width 1.4 mm
	Standards/Approvals No
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 FDN302P

GRATIS leverans för online beställningar över 500,00 kr

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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