onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement, 8-Pin MLP
- RS-artikelnummer:
- 671-0387P
- Tillv. art.nr:
- FDMC2523P
- Tillverkare / varumärke:
- onsemi
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Enheter | Per enhet |
|---|---|
| 50 - 95 | 12,522 kr |
| 100 - 495 | 10,864 kr |
| 500 - 995 | 9,542 kr |
| 1000 + | 8,692 kr |
*vägledande pris
- RS-artikelnummer:
- 671-0387P
- Tillv. art.nr:
- FDMC2523P
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | MLP | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type MLP | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 150°C | ||
Width 3 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.