onsemi PowerTrench Type P-Channel MOSFET, 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P

RS-artikelnummer:: 671-0359
Tillv. art.nr:: FDC658P
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

49,73 kr

(exkl. moms)

62,16 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 680 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
5 - 45	9,946 kr	49,73 kr
50 - 95	8,58 kr	42,90 kr
100 - 495	7,436 kr	37,18 kr
500 - 995	6,54 kr	32,70 kr
1000 +	5,936 kr	29,68 kr

*vägledande pris

RS-artikelnummer:: 671-0359
Tillv. art.nr:: FDC658P
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.7 mm
	Length	3mm
	Height	1mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.7 mm
	Length 3mm
	Height 1mm
	Standards/Approvals No
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P

GRATIS leverans för online beställningar över 500,00 kr

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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