Vishay IRFI Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 543-2193
- Tillv. art.nr:
- IRFI9610GPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
133,62 kr
(exkl. moms)
167,025 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 15 enhet(er) från den 29 december 2025
- Dessutom levereras 65 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 26,724 kr | 133,62 kr |
| 50 - 245 | 25,11 kr | 125,55 kr |
| 250 - 495 | 22,736 kr | 113,68 kr |
| 500 - 1245 | 21,37 kr | 106,85 kr |
| 1250 + | 20,048 kr | 100,24 kr |
*vägledande pris
- RS-artikelnummer:
- 543-2193
- Tillv. art.nr:
- IRFI9610GPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 27W | |
| Forward Voltage Vf | -5.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.63mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 27W | ||
Forward Voltage Vf -5.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.63mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Height 9.8mm | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Dynamic dV/dt rating
Low thermal resistance
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