Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 543-1500P
- Tillv. art.nr:
- IRFP2907PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 10 enheter (levereras i ett rör)*
496,20 kr
(exkl. moms)
620,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 933 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 10 - 24 | 49,62 kr |
| 25 - 49 | 47,60 kr |
| 50 - 99 | 45,47 kr |
| 100 + | 42,34 kr |
*vägledande pris
- RS-artikelnummer:
- 543-1500P
- Tillv. art.nr:
- IRFP2907PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 209A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 470W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 410nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341348 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 209A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 470W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 410nC | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Automotive Standard No | ||
Distrelec Product Id 30341348 | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.