Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220 IRF630NPBF

RS-artikelnummer:: 543-0068
Tillv. art.nr:: IRF630NPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220 IRF630NPBF

Mängdrabatt möjlig

Antal (1 enhet)*

13,33 kr

(exkl. moms)

16,66 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

9 enhet(er) är redo att levereras
Plus 1 enhet(er) är redo att levereras från en annan plats
Dessutom levereras 570 enhet(er) från den 02 januari 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
1 - 24	13,33 kr
25 - 49	11,31 kr
50 - 99	10,64 kr
100 - 249	9,97 kr
250 +	9,52 kr

*vägledande pris

RS-artikelnummer:: 543-0068
Tillv. art.nr:: IRF630NPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	82W
	Typical Gate Charge Qg @ Vgs	35nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Standards/Approvals	No
	Width	4.69 mm
	Height	8.77mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 82W
	Typical Gate Charge Qg @ Vgs 35nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Standards/Approvals No
	Width 4.69 mm
	Height 8.77mm
	Automotive Standard No

Logga in för att ladda ner CAD-modeller

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications

• Efficient design lowers thermal resistance for effective cooling

• Fast switching speeds improve performance in dynamic systems

• Simple drive requirements aid in circuit integration

• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation

• Employed in motor control systems for efficient functionality

• Ideal for DC-DC converters and power management circuits

• Used in HVAC systems to control compressor motors

• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.