Vishay IRF830A Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 542-9434P
- Tillv. art.nr:
- IRF830APBF
- Tillverkare / varumärke:
- Vishay
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Var (i ett rör med 50)
12,84 kr
(exkl. moms)
16,05 kr
(inkl. moms)
- RS-artikelnummer:
- 542-9434P
- Tillv. art.nr:
- IRF830APBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF830A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 17116197 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF830A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Distrelec Product Id 17116197 | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C