STMicroelectronics STripFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-220 IRF630
- RS-artikelnummer:
- 486-0171
- Tillv. art.nr:
- IRF630
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
83,33 kr
(exkl. moms)
104,16 kr
(inkl. moms)
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- Dessutom levereras 285 enhet(er) från den 29 december 2025
- Dessutom levereras 135 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 16,666 kr | 83,33 kr |
| 25 - 45 | 15,86 kr | 79,30 kr |
| 50 - 120 | 14,268 kr | 71,34 kr |
| 125 - 245 | 12,812 kr | 64,06 kr |
| 250 + | 12,186 kr | 60,93 kr |
*vägledande pris
- RS-artikelnummer:
- 486-0171
- Tillv. art.nr:
- IRF630
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.15mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.15mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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