Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- RS-artikelnummer:
- 279-9895
- Tillv. art.nr:
- SI4190BDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 4 enheter)*
119,732 kr
(exkl. moms)
149,664 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 4 980 enhet(er) från den 16 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 4 - 56 | 29,933 kr | 119,73 kr |
| 60 - 96 | 28,085 kr | 112,34 kr |
| 100 - 236 | 25,033 kr | 100,13 kr |
| 240 - 996 | 24,555 kr | 98,22 kr |
| 1000 + | 24,08 kr | 96,32 kr |
*vägledande pris
- RS-artikelnummer:
- 279-9895
- Tillv. art.nr:
- SI4190BDY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Power Dissipation Pd | 8.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Power Dissipation Pd 8.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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