Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 273-3030
- Tillv. art.nr:
- IRFS7537TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
96,33 kr
(exkl. moms)
120,41 kr
(inkl. moms)
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- 785 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 19,266 kr | 96,33 kr |
| 25 - 45 | 16,084 kr | 80,42 kr |
| 50 - 95 | 14,828 kr | 74,14 kr |
| 100 - 245 | 13,754 kr | 68,77 kr |
| 250 + | 13,508 kr | 67,54 kr |
*vägledande pris
- RS-artikelnummer:
- 273-3030
- Tillv. art.nr:
- IRFS7537TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 173A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 173A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
relaterade länkar
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- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
