Vishay SQ Type N-Channel MOSFET, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEV-T1_GE3
- RS-artikelnummer:
- 268-8350
- Tillv. art.nr:
- SQ3426CEV-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
5 184,00 kr
(exkl. moms)
6 480,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 000 enhet(er) från den 01 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 1,728 kr | 5 184,00 kr |
| 6000 + | 1,672 kr | 5 016,00 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8350
- Tillv. art.nr:
- SQ3426CEV-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSOP-6 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.092Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSOP-6 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.092Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and surface mount type device. It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
relaterade länkar
- Vishay SQ Type N-Channel MOSFET 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEV-T1_GE3
- Vishay SQ Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP-6 SQ3456CEV-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 6-Pin TSOP-6
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Vishay SQ3426CE Type N-Channel Single MOSFETs 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEEV-T1_GE3
- Vishay SQ3426CE Type N-Channel Single MOSFETs 60 V Enhancement, 6-Pin TSOP-6
