ROHM R6013VNX Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 265-5418P
- Tillv. art.nr:
- R6013VNXC7G
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal 50 enheter (levereras på en kontinuerlig remsa)*
952,00 kr
(exkl. moms)
1 190,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 986 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 50 - 98 | 19,04 kr |
| 100 - 248 | 15,51 kr |
| 250 - 498 | 15,175 kr |
| 500 + | 13,16 kr |
*vägledande pris
- RS-artikelnummer:
- 265-5418P
- Tillv. art.nr:
- R6013VNXC7G
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | R6013VNX | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 54W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series R6013VNX | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 54W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple