Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92 VP0104N3-G
- RS-artikelnummer:
- 264-8949
- Tillv. art.nr:
- VP0104N3-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
102,93 kr
(exkl. moms)
128,66 kr
(inkl. moms)
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- Dessutom levereras 350 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,293 kr | 102,93 kr |
| 50 - 90 | 10,091 kr | 100,91 kr |
| 100 - 240 | 8,019 kr | 80,19 kr |
| 250 - 490 | 7,851 kr | 78,51 kr |
| 500 + | 7,706 kr | 77,06 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8949
- Tillv. art.nr:
- VP0104N3-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -500mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92 | |
| Series | VP0104 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -500mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92 | ||
Series VP0104 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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