Microchip TP0620 Type P-Channel MOSFET, -175 A, 200 V Enhancement, 3-Pin TO-92 TP0620N3-G
- RS-artikelnummer:
- 264-8927
- Tillv. art.nr:
- TP0620N3-G
- Tillverkare / varumärke:
- Microchip
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
93,41 kr
(exkl. moms)
116,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 580 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 18,682 kr | 93,41 kr |
| 50 - 95 | 15,412 kr | 77,06 kr |
| 100 - 245 | 14,292 kr | 71,46 kr |
| 250 - 495 | 14,00 kr | 70,00 kr |
| 500 + | 13,708 kr | 68,54 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8927
- Tillv. art.nr:
- TP0620N3-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -175A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-92 | |
| Series | TP0620 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -175A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-92 | ||
Series TP0620 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
relaterade länkar
- Microchip TP0620 Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-92
- Microchip Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-92
- Microchip Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-92 TP2104N3-G
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-92
- Microchip TN2540 Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-92 TN2540N3-G
- Microchip VP3203 Type P-Channel MOSFET 3-Pin TO-92 VP3203N3-G
- Microchip LP0701 Type P-Channel MOSFET 3-Pin TO-92 LP0701N3-G
- Microchip Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-92