STMicroelectronics Type N-Channel MOSFET, 20 A, 3-Pin TO-252
- RS-artikelnummer:
- 261-5482
- Tillv. art.nr:
- STD65N160M9
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 rulle med 2500 enheter)*
67 467,50 kr
(exkl. moms)
84 335,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 januari 2027
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 - 2500 | 26,987 kr | 67 467,50 kr |
| 5000 + | 25,638 kr | 64 095,00 kr |
*vägledande pris
- RS-artikelnummer:
- 261-5482
- Tillv. art.nr:
- STD65N160M9
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Width | 6.6 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Width 6.6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
Higher VDSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
Zener protected
relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 3-Pin TO-252 STD65N160M9
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics M6 Type N-Channel MOSFET 600 V, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
