Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP IPDQ60R022S7XTMA1
- RS-artikelnummer:
- 260-1200
- Tillv. art.nr:
- IPDQ60R022S7XTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
147,55 kr
(exkl. moms)
184,44 kr
(inkl. moms)
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- Dessutom levereras 750 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 147,55 kr |
| 5 - 9 | 135,74 kr |
| 10 - 24 | 127,01 kr |
| 25 - 49 | 118,05 kr |
| 50 + | 109,20 kr |
*vägledande pris
- RS-artikelnummer:
- 260-1200
- Tillv. art.nr:
- IPDQ60R022S7XTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 416W | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 416W | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
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