Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

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43 934,40 kr

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54 918,00 kr

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RS-artikelnummer:
259-2739
Tillv. art.nr:
IPTG063N15NM5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

122A

Maximum Drain Source Voltage Vds

150V

Package Type

HSOG

Series

IPT

Pin Count

8

Maximum Drain Source Resistance Rds

6.3mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.84V

Typical Gate Charge Qg @ Vgs

50nC

Maximum Operating Temperature

175°C

Height

2.4mm

Width

8.75 mm

Length

10.1mm

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-22

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