Infineon IPW Type N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247
- RS-artikelnummer:
- 258-3906
- Tillv. art.nr:
- IPW60R099C7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
1 375,80 kr
(exkl. moms)
1 719,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 120 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 45,86 kr | 1 375,80 kr |
| 60 - 120 | 43,568 kr | 1 307,04 kr |
| 150 + | 41,731 kr | 1 251,93 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3906
- Tillv. art.nr:
- IPW60R099C7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPW | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPW | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS C7 super junction MOSFET series offers a ∼50% reduction in turn-off losses compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The MOSFET is also a perfect match for high-power-density charger designs. Efficiency and TCO applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Increased switching frequency
Best R (on)A in the world
Rugged body diode
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
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