Infineon IPP Type N-Channel MOSFET, 50 A, 650 V TO-220 IPP65R041CFD7XKSA1
- RS-artikelnummer:
- 258-3897
- Tillv. art.nr:
- IPP65R041CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
82,94 kr
(exkl. moms)
103,68 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 496 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 4 | 82,94 kr |
| 5 - 9 | 78,74 kr |
| 10 - 24 | 75,49 kr |
| 25 - 49 | 72,13 kr |
| 50 + | 67,20 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3897
- Tillv. art.nr:
- IPP65R041CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPP | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
relaterade länkar
- Infineon IPP Type N-Channel MOSFET 650 V TO-220
- Infineon IPP Type N-Channel MOSFET 650 V, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 650 V, 3-Pin TO-220 IPP65R095C7XKSA1
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220
- Infineon IPP Type N-Channel MOSFET, 84 A TO-220 IPP120N20NFDAKSA1
- Infineon IPP Type N-Channel MOSFET 60 V TO-220
- Infineon IPP Type N-Channel MOSFET 500 V TO-220
- Infineon IPP Type N-Channel MOSFET 500 V TO-220 IPP50R380CEXKSA1