Infineon HEXFET Type N-Channel MOSFET, 46 A, 250 V TO-220 IRFB4229PBF

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

73,60 kr

(exkl. moms)

92,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 470 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 - 1836,80 kr73,60 kr
20 - 4833,095 kr66,19 kr
50 - 9830,91 kr61,82 kr
100 - 19828,73 kr57,46 kr
200 +26,49 kr52,98 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
257-9347
Tillv. art.nr:
IRFB4229PBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Maximum Gate Source Voltage Vgs

10 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRFB series is the 250V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard through hole power package

High current rating

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

relaterade länkar