Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF

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57,68 kr

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72,10 kr

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10 - 905,768 kr57,68 kr
100 - 2405,488 kr54,88 kr
250 - 4904,906 kr49,06 kr
500 - 9903,472 kr34,72 kr
1000 +2,822 kr28,22 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
257-5826
Tillv. art.nr:
IRLHS6276TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Maximum Power Dissipation Pd

9.6W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.1nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±12 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

2 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

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