Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN

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Antal (1 rulle med 4000 enheter)*

28 444,00 kr

(exkl. moms)

35 556,00 kr

(inkl. moms)

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4000 +7,111 kr28 444,00 kr

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RS-artikelnummer:
257-5525
Tillv. art.nr:
IRFH5215TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Width

5 mm

Length

6mm

Standards/Approvals

RoHS

Height

0.9mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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