DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin X1-DFN1006-3 DMP2900UFB-7B
- RS-artikelnummer:
- 254-8624
- Tillv. art.nr:
- DMP2900UFB-7B
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
56,175 kr
(exkl. moms)
70,225 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 9 500 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 475 | 2,247 kr | 56,18 kr |
| 500 - 975 | 0,811 kr | 20,28 kr |
| 1000 - 2475 | 0,578 kr | 14,45 kr |
| 2500 - 4975 | 0,569 kr | 14,23 kr |
| 5000 + | 0,56 kr | 14,00 kr |
*vägledande pris
- RS-artikelnummer:
- 254-8624
- Tillv. art.nr:
- DMP2900UFB-7B
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP | |
| Package Type | X1-DFN1006-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 1.07mm | |
| Height | 5.3mm | |
| Width | 0.67 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP | ||
Package Type X1-DFN1006-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 1.07mm | ||
Height 5.3mm | ||
Width 0.67 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
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