Vishay Type P-Channel MOSFET, 6.46 A, 60 V Enhancement, 7-Pin PowerPAK SC-70W-6L SQA411CEJW-T1_GE3
- RS-artikelnummer:
- 252-0300
- Tillv. art.nr:
- SQA411CEJW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
125,55 kr
(exkl. moms)
156,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 300 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 5,022 kr | 125,55 kr |
| 250 - 600 | 4,713 kr | 117,83 kr |
| 625 - 1225 | 4,27 kr | 106,75 kr |
| 1250 - 2475 | 4,014 kr | 100,35 kr |
| 2500 + | 3,763 kr | 94,08 kr |
*vägledande pris
- RS-artikelnummer:
- 252-0300
- Tillv. art.nr:
- SQA411CEJW-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.46A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 13.6W | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 2.05mm | |
| Width | 2.05 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.46A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.21mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 13.6W | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 2.05mm | ||
Width 2.05 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
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