Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS SIZF640DT-T1-GE3
- RS-artikelnummer:
- 252-0298
- Tillv. art.nr:
- SIZF640DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
218,74 kr
(exkl. moms)
273,425 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 975 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 43,748 kr | 218,74 kr |
| 25 - 45 | 41,126 kr | 205,63 kr |
| 50 - 120 | 37,184 kr | 185,92 kr |
| 125 - 245 | 34,988 kr | 174,94 kr |
| 250 + | 32,816 kr | 164,08 kr |
*vägledande pris
- RS-artikelnummer:
- 252-0298
- Tillv. art.nr:
- SIZF640DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 159A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 6 x 5FS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00137Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Transistor Configuration | Symmetric Dual N Channel | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 159A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 6 x 5FS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00137Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Transistor Configuration Symmetric Dual N Channel | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
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