Infineon AUIRFS Type N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220 AUIRFB8409
- RS-artikelnummer:
- 249-6872
- Tillv. art.nr:
- AUIRFB8409
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
98,98 kr
(exkl. moms)
123,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 995 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 + | 98,98 kr |
*vägledande pris
- RS-artikelnummer:
- 249-6872
- Tillv. art.nr:
- AUIRFB8409
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
relaterade länkar
- Infineon AUIRFS Type N-Channel MOSFET 40 V, 3-Pin TO-220
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220 AUIRF1404Z
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220 AUIRF3205
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRFB7430PBF
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF
