STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- RS-artikelnummer:
- 248-4899P
- Tillv. art.nr:
- STL320N4LF8
- Tillverkare / varumärke:
- STMicroelectronics
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278,90 kr
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348,60 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 10 - 18 | 27,89 kr |
| 20 - 48 | 25,09 kr |
| 50 - 98 | 22,57 kr |
| 100 + | 21,45 kr |
*vägledande pris
- RS-artikelnummer:
- 248-4899P
- Tillv. art.nr:
- STL320N4LF8
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Width | 4.9 mm | |
| Height | 1mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Width 4.9 mm | ||
Height 1mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
175 degree C operating temperature
100 percent avalanche tested