DiodesZetex DMP Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 DMP2070U-7
- RS-artikelnummer:
- 246-7525
- Tillv. art.nr:
- DMP2070U-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
123,20 kr
(exkl. moms)
154,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 2 125 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 4,928 kr | 123,20 kr |
| 50 - 75 | 4,825 kr | 120,63 kr |
| 100 - 225 | 3,665 kr | 91,63 kr |
| 250 - 975 | 3,593 kr | 89,83 kr |
| 1000 + | 3,382 kr | 84,55 kr |
*vägledande pris
- RS-artikelnummer:
- 246-7525
- Tillv. art.nr:
- DMP2070U-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT23 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±8 V It offers low on-resistance It has low gate threshold voltage
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