DiodesZetex 2 Type P, Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin UDFN-2020 DMC2053UFDB-7
- RS-artikelnummer:
- 246-7496
- Tillv. art.nr:
- DMC2053UFDB-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
53,75 kr
(exkl. moms)
67,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 750 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 2,15 kr | 53,75 kr |
| 50 - 75 | 2,101 kr | 52,53 kr |
| 100 - 225 | 1,554 kr | 38,85 kr |
| 250 - 975 | 1,519 kr | 37,98 kr |
| 1000 + | 1,483 kr | 37,08 kr |
*vägledande pris
- RS-artikelnummer:
- 246-7496
- Tillv. art.nr:
- DMC2053UFDB-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.168Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 1.14W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.168Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 1.14W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a complementary pair enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate
relaterade länkar
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020
- DiodesZetex Type N 4.6 A 6-Pin UDFN-2020
- DiodesZetex Type N 4.6 A 6-Pin UDFN-2020 DMC2053UFDBQ-7
- DiodesZetex 2 Type P-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type P-Channel MOSFET 6-Pin UDFN-2020 DMP2110UFDB-7
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Type P-Channel MOSFET 12 V Enhancement, 6-Pin UDFN-2020 DMP2016UFDF-7
- DiodesZetex Dual DMP Type P-Channel MOSFET 20 V Enhancement, 6-Pin UDFN-2020