DiodesZetex Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin PowerDI5060-8
- RS-artikelnummer:
- 246-6876
- Tillv. art.nr:
- DMT32M5LPSW-13
- Tillverkare / varumärke:
- DiodesZetex
Antal (1 rulle med 2500 enheter)*
13 647,50 kr
(exkl. moms)
17 060,00 kr
(inkl. moms)
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- 2 500 enhet(er) är redo att levereras
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 5,459 kr | 13 647,50 kr |
*vägledande pris
- RS-artikelnummer:
- 246-6876
- Tillv. art.nr:
- DMT32M5LPSW-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.003Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 6.4mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.003Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 6.4mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, it has been designed to minimize the on state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. Less than 1.1 mm of packaging size makes it ideal for thin applications.
Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±20 V Thermally efficient package ideal for cooler running applications It offers low input capacitance
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