Infineon IRF Type N-Channel MOSFET, 192 A, 75 V, 3-Pin TO-247 IRF300P227
- RS-artikelnummer:
- 244-2930
- Tillv. art.nr:
- IRF300P227
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
84,33 kr
(exkl. moms)
105,41 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 383 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 + | 84,33 kr |
*vägledande pris
- RS-artikelnummer:
- 244-2930
- Tillv. art.nr:
- IRF300P227
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRF300P227 qualification report describes the characteristics of the product with respect to quality and reliability. The qualification sample selection was done on production lots which were manufactured and tested on standard production processes and meet the defined requirements. The qualification test results of those products as outlined in this document are based on JEDEC for target applications and may reference existing qualification results of similar products. Such referencing is justified by the structural similarity of the products.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
relaterade länkar
- Infineon IRF Type N-Channel MOSFET 75 V, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247
- Infineon IMZA Type N-Channel MOSFET 75 V N, 4-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247 IRFP4127PBF
- Infineon IMZA Type N-Channel MOSFET 75 V N, 4-Pin TO-247 IMZA120R020M1HXKSA1
- Infineon IMW Type N-Channel MOSFET 75 V N, 3-Pin TO-247 IMW120R030M1HXKSA1
- Infineon IMZA Type N-Channel MOSFET 75 V N, 4-Pin TO-247 IMZA120R007M1HXKSA1
