Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R140M1HXKSA1
- RS-artikelnummer:
- 244-2926
- Tillv. art.nr:
- IMW120R140M1HXKSA1
- Tillverkare / varumärke:
- Infineon
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71,90 kr
(exkl. moms)
89,88 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 71,90 kr |
| 5 - 9 | 68,32 kr |
| 10 - 24 | 65,30 kr |
| 25 - 49 | 62,61 kr |
| 50 + | 58,24 kr |
*vägledande pris
- RS-artikelnummer:
- 244-2926
- Tillv. art.nr:
- IMW120R140M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IMW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IMW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IMW120R140M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
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