Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ
- RS-artikelnummer:
- 243-4890
- Tillv. art.nr:
- PXP6R1-30QLJ
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
107,74 kr
(exkl. moms)
134,68 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 17 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,774 kr | 107,74 kr |
| 50 - 90 | 10,562 kr | 105,62 kr |
| 100 - 240 | 8,389 kr | 83,89 kr |
| 250 - 990 | 8,21 kr | 82,10 kr |
| 1000 + | 6,059 kr | 60,59 kr |
*vägledande pris
- RS-artikelnummer:
- 243-4890
- Tillv. art.nr:
- PXP6R1-30QLJ
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 22.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 22.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
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