Nexperia Type P-Channel MOSFET, 12.1 A, 20 V Enhancement, 8-Pin MLPAK33 PXP020-20QXJ
- RS-artikelnummer:
- 243-4885
- Tillv. art.nr:
- PXP020-20QXJ
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
162,40 kr
(exkl. moms)
203,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 700 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 6,496 kr | 162,40 kr |
| 50 - 75 | 6,37 kr | 159,25 kr |
| 100 - 225 | 4,847 kr | 121,18 kr |
| 250 - 975 | 4,749 kr | 118,73 kr |
| 1000 + | 2,934 kr | 73,35 kr |
*vägledande pris
- RS-artikelnummer:
- 243-4885
- Tillv. art.nr:
- PXP020-20QXJ
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field effect transistor (FET) in a small SOT23 surface mounted device (SMD) plastic package having trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
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