Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L012ATMA1
- RS-artikelnummer:
- 241-9890
- Tillv. art.nr:
- IAUC120N04S6L012ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
34,84 kr
(exkl. moms)
43,56 kr
(inkl. moms)
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- Dessutom levereras 14 988 enhet(er) från den 12 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 17,42 kr | 34,84 kr |
| 20 - 48 | 14,45 kr | 28,90 kr |
| 50 - 98 | 13,55 kr | 27,10 kr |
| 100 - 198 | 12,71 kr | 25,42 kr |
| 200 + | 11,705 kr | 23,41 kr |
*vägledande pris
- RS-artikelnummer:
- 241-9890
- Tillv. art.nr:
- IAUC120N04S6L012ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 Power-Transistor is a N channel power MOSFET for automotive applications. It is 100% Avalanche tested.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
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