Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON-8 FL BSC019N06NSATMA1
- RS-artikelnummer:
- 241-9873
- Tillv. art.nr:
- BSC019N06NSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
47,87 kr
(exkl. moms)
59,838 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 3 658 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 23,935 kr | 47,87 kr |
| 20 - 48 | 20,105 kr | 40,21 kr |
| 50 - 98 | 18,93 kr | 37,86 kr |
| 100 - 198 | 17,53 kr | 35,06 kr |
| 200 + | 16,24 kr | 32,48 kr |
*vägledande pris
- RS-artikelnummer:
- 241-9873
- Tillv. art.nr:
- BSC019N06NSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8 FL | |
| Series | BSC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8 FL | ||
Series BSC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS Power-Transistor is a N channel MOSFET which is optimized for synchronous rectification. It is 100% avalanche tested.
Higher solder joint reliability due to enlarged source interconnection
Qualified according to JEDEC for target applications
Halogen-free according to IEC61249-2-21
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