Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6

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25 985,00 kr

(exkl. moms)

32 480,00 kr

(inkl. moms)

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RS-artikelnummer:
241-9678
Tillv. art.nr:
BSZ017NE2LS5IATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 134 A drain current (ID). It offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. It has best-in-class on-state resistance and have broader use in desktop and server, high power density voltage regulator, etc.

Optimized for high performance buck converters

Monolithic integrated schottky like diode

Very low on-resistance RDS(on)@VGS = 4.5V

100% avalanche tested

N-channel

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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