Vishay EF Type N-Channel MOSFET, 7 A, 850 V Depletion, 3-Pin TO-220 SIHA21N80AEF-GE3
- RS-artikelnummer:
- 239-8625
- Tillv. art.nr:
- SIHA21N80AEF-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
78,18 kr
(exkl. moms)
97,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 1 000 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 39,09 kr | 78,18 kr |
| 20 - 98 | 36,68 kr | 73,36 kr |
| 100 - 198 | 33,265 kr | 66,53 kr |
| 200 - 498 | 31,305 kr | 62,61 kr |
| 500 + | 29,345 kr | 58,69 kr |
*vägledande pris
- RS-artikelnummer:
- 239-8625
- Tillv. art.nr:
- SIHA21N80AEF-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.22Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.22Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
Low figure-of-merit
Low effective capacitance
Low switching and conduction losses
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